A new, general model for mechanical stress evolution during electromigration

Thin Solid Films

Volumn 365, Issue 2, 2000, Pages 211-218

  Sarychev, M E ^a   Zhitnikov, Yu V ^a   Borucki, L ^b   Liu, C L ^b   Makhviladze, T M ^a  

^a SOFT TEC   (Russian Federation)

^b MOTOROLA INC   (United States)

Author keywords

Electromigration; Embedded atom method; Mechanical stress evolution

Indexed keywords

BOUNDARY CONDITIONS; ELECTROMIGRATION; MATHEMATICAL MODELS; THERMAL STRESS; THIN FILMS;

EMBEDDED ATOM METHOD;

SEMICONDUCTING FILMS;

EID: 0033734775     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)01054-8     Document Type: Article

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