Effects of atomic hydrogen on the growth of GaN by RF-molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 3 A, 1999, Pages

  Okamoto, Yoshihiro ^a   Hashiguchi, Shinji ^a   Okada, Yoshitaka ^a   Kawabe, Mitsuo ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; DIFFUSION IN SOLIDS; FILM GROWTH; GAS ADSORPTION; HYDROGEN; ION BOMBARDMENT; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; THERMAL EFFECTS;

FULL WIDTH AT HALF MAXIMUM (FWHM); GALLIUM NITRIDE; SURFACE RECONSTRUCTION;

SEMICONDUCTING FILMS;

EID: 0032675875     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l230     Document Type: Article

References (19)