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Applied Physics A: Materials Science and Processing

Volumn 81, Issue 6, 2005, Pages 1167-1171

Pulsed laser deposited ZrAlON films for high-k gate dielectric applications

(3) Zhu, J a Liu, Z G b Li, Y R a

a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

b NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; COATINGS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRON DIFFRACTION; HIGH RESOLUTION ELECTRON MICROSCOPY; LASER ABLATION; LEAKAGE CURRENTS; PERMITTIVITY; PULSED LASER DEPOSITION; RAPID THERMAL ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

EQUIVALENT OXIDE THICKNESS (EOT); GATE VOLTAGE; INTERFACIAL LAYERS; REACTIVE ABLATION;

ZIRCONIUM COMPOUNDS;

EID: 24144493458 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-004-3148-2 Document Type: Article

Times cited : (8)

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