Structure and dielectric properties of Zr-Al-O thin films prepared by pulsed laser deposition

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 849-854

  Zhu, J ^a   Liu, Z G ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

High k gate dielectric; Pulsed laser deposition; Zr Al O thin films

Indexed keywords

DIELECTRIC FILMS; DIFFERENTIAL THERMAL ANALYSIS; LEAKAGE CURRENTS; PERMITTIVITY; PULSED LASER DEPOSITION; RAPID THERMAL ANNEALING; STRUCTURE (COMPOSITION); X RAY DIFFRACTION ANALYSIS; ZIRCONIUM COMPOUNDS;

EQUIVALENT OXIDE THICKNESS (EOT);

THIN FILMS;

EID: 0037391788     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)01010-9     Document Type: Conference Paper

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