-
1
-
-
0016019694
-
Mass determination with piezoelectric quartz crystal resonators
-
Lu C 1975 Mass determination with piezoelectric quartz crystal resonators. J. Vac. Sci. Technol. 12 578
-
(1975)
J. Vac. Sci. Technol.
, vol.12
, pp. 578
-
-
Lu, C.1
-
3
-
-
24144453981
-
-
Telemark, 51 Whitney Place, Fremont, CA 94539, USA, http://www.telemrk. com/telemrk/index.htm
-
-
-
-
4
-
-
10944263744
-
Nano-sculptured thin film thickness variation with incidence angle
-
Buzea C and Robbie K 2004 Nano-sculptured thin film thickness variation with incidence angle J. Optoel. Adv. Mater. 6 1251
-
(2004)
J. Optoel. Adv. Mater.
, vol.6
, pp. 1251
-
-
Buzea, C.1
Robbie, K.2
-
5
-
-
24144503083
-
-
Inficon, East Syracuse 13057, New York USA, http://www.inficon.com/
-
-
-
-
7
-
-
0016908005
-
Rate controlling and composition analysis of alloy deposition processes by electron impact emission spectroscopy (EIES)
-
Lu C, Lightner M J and Gogal C A 1977 Rate controlling and composition analysis of alloy deposition processes by electron impact emission spectroscopy (EIES) J. Vac. Sci. Technol. 14 103
-
(1977)
J. Vac. Sci. Technol.
, vol.14
, pp. 103
-
-
Lu, C.1
Lightner, M.J.2
Gogal, C.A.3
-
8
-
-
0018469223
-
Rate controlling and composition analysis of Si/Al-Si processes by electron impact emissionm spectroscopy (EIES)
-
Gogol C A 1979 Rate controlling and composition analysis of Si/Al-Si processes by electron impact emissionm spectroscopy (EIES) J. Vac. Sci. Technol. 16 884
-
(1979)
J. Vac. Sci. Technol.
, vol.16
, pp. 884
-
-
Gogol, C.A.1
-
9
-
-
0020113895
-
A performance comparison of vacuum deposition monitors employing atomic absorption (AA) and electron impact emission spectroscopy (EIES)
-
Gogol C A and Reagan S H 1983 A performance comparison of vacuum deposition monitors employing atomic absorption (AA) and electron impact emission spectroscopy (EIES) J. Vac. Sci. Technol. 1 252
-
(1983)
J. Vac. Sci. Technol.
, vol.1
, pp. 252
-
-
Gogol, C.A.1
Reagan, S.H.2
-
10
-
-
0032115313
-
An optical fibre based evanescent wave sensor to monitor the deposition rate of thin films
-
Jose D, Shelly John M, Radhakrishnan P, Nampoori V P N and Vallabhan C G G 1998 An optical fibre based evanescent wave sensor to monitor the deposition rate of thin films Thin Solid Films 325 264
-
(1998)
Thin Solid Films
, vol.325
, pp. 264
-
-
Jose, D.1
Shelly John, M.2
Radhakrishnan, P.3
Nampoori, V.P.N.4
Vallabhan, C.G.G.5
-
12
-
-
0343965810
-
Accurate measurement of atomic beam flux by pseudo-double-beam atomic absorption spectroscopy for growth of thin-film oxide superconductors
-
Klausmeier-Brown M E, Eckstein J N, Bozovic I and Virshup G F 1992 Accurate measurement of atomic beam flux by pseudo-double-beam atomic absorption spectroscopy for growth of thin-film oxide superconductors Appl. Phys. Lett. 60 657
-
(1992)
Appl. Phys. Lett.
, vol.60
, pp. 657
-
-
Klausmeier-Brown, M.E.1
Eckstein, J.N.2
Bozovic, I.3
Virshup, G.F.4
-
13
-
-
65949097470
-
Improved method of nonintrasive deposition rate monitoring by atomic absorption spectroscopy for physical vapor deposition processes
-
Lu C and Guan Y 1995 Improved method of nonintrasive deposition rate monitoring by atomic absorption spectroscopy for physical vapor deposition processes J. Vac, Sci. Technol. A 13 1797
-
(1995)
J. Vac, Sci. Technol. A
, vol.13
, pp. 1797
-
-
Lu, C.1
Guan, Y.2
-
14
-
-
0014735901
-
Investigation of the sputtering of aluminum using atomic-absorption spectroscopy
-
Stirling A J and Westwood W D 1970 Investigation of the sputtering of aluminum using atomic-absorption spectroscopy J. Appl. Phys. 41 742
-
(1970)
J. Appl. Phys.
, vol.41
, pp. 742
-
-
Stirling, A.J.1
Westwood, W.D.2
-
15
-
-
24144451569
-
The measurement of partial pressure and evaporation rate of metals by atomic resonance absorption
-
Fazekas E I and Mezey M 1972 The measurement of partial pressure and evaporation rate of metals by atomic resonance absorption J. Vac. Sci, Technol. 91119
-
(1972)
J. Vac. Sci, Technol.
, vol.9
, pp. 1119
-
-
Fazekas, E.I.1
Mezey, M.2
-
16
-
-
0001002916
-
Real-time control of molecular beam epitaxy by optical-based flux monitoring
-
Chalmers S A and Killeen K P1993 Real-time control of molecular beam epitaxy by optical-based flux monitoring Appl. Phys. Lett. 63 3131
-
(1993)
Appl. Phys. Lett.
, vol.63
, pp. 3131
-
-
Chalmers, S.A.1
Killeen, K.P.2
-
17
-
-
24144463312
-
-
Luxtron Corporation, 3033 Scott Blvd. Santa Clara, CA 95054-3316, USA, http://www.luxtron.com/
-
-
-
-
18
-
-
0033336868
-
In situ spectroscopic ellipsometry as a surface-sensitive tool to probe thin film growth
-
Liu C, Erdmann J and Macrander A 1999 In situ spectroscopic ellipsometry as a surface-sensitive tool to probe thin film growth Thin Solid Films 355-356 41
-
(1999)
Thin Solid Films
, vol.355-356
, pp. 41
-
-
Liu, C.1
Erdmann, J.2
Macrander, A.3
-
19
-
-
0033424581
-
Thickness determination of metal thin films with spectroscopic ellipsometry for x-ray mirror and multilayer applications
-
Liu C, Erdmann J, Maj J and Macrander A 1999 Thickness determination of metal thin films with spectroscopic ellipsometry for x-ray mirror and multilayer applications J. Vac. Sci. Technol. A 17 2741
-
(1999)
J. Vac. Sci. Technol. A
, vol.17
, pp. 2741
-
-
Liu, C.1
Erdmann, J.2
Maj, J.3
Macrander, A.4
-
20
-
-
21144462603
-
In situ spectroscopic ellipsometry in molecular beam epitaxy
-
Maracas G N, Edwards J L, Shiralagi K, Choi K Y, Droopad R, Johs B and Woolam J A 1992 In situ spectroscopic ellipsometry in molecular beam epitaxy J. Vac. Sci. Technol. A 10 1832
-
(1992)
J. Vac. Sci. Technol. A
, vol.10
, pp. 1832
-
-
Maracas, G.N.1
Edwards, J.L.2
Shiralagi, K.3
Choi, K.Y.4
Droopad, R.5
Johs, B.6
Woolam, J.A.7
-
21
-
-
0027593215
-
Simultaneous in situ measurement of film thickness and temperature by using multiple wavelengths pyrometric interferometry (MWPI)
-
Boebel F G and Moller H 1993 Simultaneous in situ measurement of film thickness and temperature by using multiple wavelengths pyrometric interferometry (MWPI) IEEE Trans. Semicond. Manuf. 6 112
-
(1993)
IEEE Trans. Semicond. Manuf.
, vol.6
, pp. 112
-
-
Boebel, F.G.1
Moller, H.2
-
23
-
-
84948146539
-
First thin film realization of a helicoidal bianisotropic medium
-
Robbie K, Brett M J and Lakhtakia A 1995 First thin film realization of a helicoidal bianisotropic medium J. Vac. Sci. Technol. A 13 2991
-
(1995)
J. Vac. Sci. Technol. A
, vol.13
, pp. 2991
-
-
Robbie, K.1
Brett, M.J.2
Lakhtakia, A.3
-
24
-
-
0033600241
-
Chiral nematic order in liquid crystals imposed by an engineered inorganic nanostructure
-
Robbie K, Broer D J and Brett M J 1999 Chiral nematic order in liquid crystals imposed by an engineered inorganic nanostructure Nature (London) 399 764
-
(1999)
Nature (London)
, vol.399
, pp. 764
-
-
Robbie, K.1
Broer, D.J.2
Brett, M.J.3
-
25
-
-
2042480716
-
Ultrahigh vacuum glancing angle deposition system for thin films with controlled three-dimensional nanoscale structure
-
Robbie K, Beydaghyan G, Brown T, Dean C, Adams J and Buzea C 2004 Ultrahigh vacuum glancing angle deposition system for thin films with controlled three-dimensional nanoscale structure Rev. Sci. Instrum. 75 1089
-
(2004)
Rev. Sci. Instrum.
, vol.75
, pp. 1089
-
-
Robbie, K.1
Beydaghyan, G.2
Brown, T.3
Dean, C.4
Adams, J.5
Buzea, C.6
-
26
-
-
24144462740
-
-
SVT Associates, Inc., 7620 Executive Drive, Eden Prairie, MN 55344 USA, www.svta.com
-
-
-
-
28
-
-
5344262537
-
Recoil implantation of alpha sources for thickness measurement of thin films
-
Kelson I, Levy Y and Redman E 1995 Recoil implantation of alpha sources for thickness measurement of thin films. J. Phys. D: Appl. Phys. 28 100
-
(1995)
J. Phys. D: Appl. Phys.
, vol.28
, pp. 100
-
-
Kelson, I.1
Levy, Y.2
Redman, E.3
-
29
-
-
0031250483
-
In situ thickness measurements in molecular beam epitaxy using alpha particle energy loss
-
Beaudoin M, Gelbart Z, Giesen U, Kelson I, Levy Y, MacKenzie J A, Pinnington T, Ritchie S, Spring Thorpe A J, Streater R and Tiedje T 1997 In situ thickness measurements in molecular beam epitaxy using alpha particle energy loss Surf. Coat. Technol. 94-95 374
-
(1997)
Surf. Coat. Technol.
, vol.94-95
, pp. 374
-
-
Beaudoin, M.1
Gelbart, Z.2
Giesen, U.3
Kelson, I.4
Levy, Y.5
MacKenzie, J.A.6
Pinnington, T.7
Ritchie, S.8
Spring Thorpe, A.J.9
Streater, R.10
Tiedje, T.11
-
30
-
-
0031556915
-
The applicability of implanted β-sources to thickness and stoichiometry measurements of thin film
-
Kelson I, Levy Y, Racah D, Redmard E, Beaudoin M, Pinnington T, Tiedje T and Giesen U 1997 The applicability of implanted β-sources to thickness and stoichiometry measurements of thin film J. Phys. D: Appl. Phys. 30 131
-
(1997)
J. Phys. D: Appl. Phys.
, vol.30
, pp. 131
-
-
Kelson, I.1
Levy, Y.2
Racah, D.3
Redmard, E.4
Beaudoin, M.5
Pinnington, T.6
Tiedje, T.7
Giesen, U.8
-
31
-
-
0001956995
-
Oscillations in the surface structure of Sn-doped GaAs during growth by MBE
-
Harris J J, Joyce B A and Dobson P J 1981 Oscillations in the surface structure of Sn-doped GaAs during growth by MBE Surf. Sci. 103 L90
-
(1981)
Surf. Sci.
, vol.103
-
-
Harris, J.J.1
Joyce, B.A.2
Dobson, P.J.3
-
32
-
-
84975950515
-
Quantitative electron diffraction from thin films
-
Lagally M G and Savage D E 1993 Quantitative electron diffraction from thin films MRS Bull. XVIII 24
-
(1993)
MRS Bull.
, vol.18
, pp. 24
-
-
Lagally, M.G.1
Savage, D.E.2
-
34
-
-
0001035350
-
Homoepitaxial growth of iron and a real space view of reflection high energy electron diffraction
-
Stroscio J A, Pierce D T and Dragosnet R A 1993 Homoepitaxial growth of iron and a real space view of reflection high energy electron diffraction Phys. Rev. Lett. 70 3615
-
(1993)
Phys. Rev. Lett.
, vol.70
, pp. 3615
-
-
Stroscio, J.A.1
Pierce, D.T.2
Dragosnet, R.A.3
-
35
-
-
0041874155
-
Reflection high-energy electron diffraction oscillations during epitaxial growth of high-temperature superconducting oxides
-
Terashima T, Bando Y, Iijima K, Yamamoto K, Hirata K, Hayashi K, Kamiyagi K and Terauchi H 1990 Reflection high-energy electron diffraction oscillations during epitaxial growth of high-temperature superconducting oxides Phys. Rev. Lett. 65 2684
-
(1990)
Phys. Rev. Lett.
, vol.65
, pp. 2684
-
-
Terashima, T.1
Bando, Y.2
Iijima, K.3
Yamamoto, K.4
Hirata, K.5
Hayashi, K.6
Kamiyagi, K.7
Terauchi, H.8
-
37
-
-
0031557645
-
In situ monitoring during pulsed laser deposition of complex oxides using reflection high energy electron diffraction under high oxygen pressure
-
Rijnders G J H M, Koster G, Blank D H A and Rogalla H 1997 In situ monitoring during pulsed laser deposition of complex oxides using reflection high energy electron diffraction under high oxygen pressure Appl. Phys. Lett. 70 1888
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 1888
-
-
Rijnders, G.J.H.M.1
Koster, G.2
Blank, D.H.A.3
Rogalla, H.4
-
38
-
-
0041468635
-
4 thin films
-
4 thin films Appl. Phys. A 77 619
-
(2003)
Appl. Phys. A
, vol.77
, pp. 619
-
-
Reisinger, D.1
Blass, B.2
Klein, J.3
Philipp, J.B.4
Schonecke, M.5
Erb, A.6
Alff, L.7
Gross, R.8
-
39
-
-
0012739986
-
Reflection high-energy electron diffraction intensity oscillations during molecular-beam epitaxy on rotating substrates
-
Van Der Wagt J P A and Harris J S Jr 1994 Reflection high-energy electron diffraction intensity oscillations during molecular-beam epitaxy on rotating substrates J. Vac. Sci. Technol. B 12 1236
-
(1994)
J. Vac. Sci. Technol. B
, vol.12
, pp. 1236
-
-
Van Der Wagt, J.P.A.1
Harris Jr., J.S.2
-
40
-
-
0342991744
-
Reflection high-energy electron diffraction oscillations from vicinal surfaces - A new approach to surface diffusion measurements
-
Neave J H, Dobson P J, Joyce B A and Zhang J 1985 Reflection high-energy electron diffraction oscillations from vicinal surfaces - a new approach to surface diffusion measurements AppL Phys. Lett. 47 100
-
(1985)
AppL Phys. Lett.
, vol.47
, pp. 100
-
-
Neave, J.H.1
Dobson, P.J.2
Joyce, B.A.3
Zhang, J.4
-
41
-
-
0942280277
-
Phase shift behaviour of RHEED intensity oscillation in intermediate growth mode between layer-by-layer mode and step flow mode
-
Lee G H and Shin B C 2004 Phase shift behaviour of RHEED intensity oscillation in intermediate growth mode between layer-by-layer mode and step flow mode J. Eur. Ceram. Soc. 24 1659
-
(2004)
J. Eur. Ceram. Soc.
, vol.24
, pp. 1659
-
-
Lee, G.H.1
Shin, B.C.2
-
42
-
-
0037382819
-
Accuracy of AlGaAs growth rates and composition determination using RHEED oscillations
-
Harvey T E, Bertness K A, Hickernell R K, Wang C M and Splett J D 2003 Accuracy of AlGaAs growth rates and composition determination using RHEED oscillations J. Cryst. Gwwth 251 73
-
(2003)
J. Cryst. Gwwth
, vol.251
, pp. 73
-
-
Harvey, T.E.1
Bertness, K.A.2
Hickernell, R.K.3
Wang, C.M.4
Splett, J.D.5
-
43
-
-
0038721264
-
Recognition of the atomic terminating layer in perovskite oxide substrates by reflection high energy electron diffraction
-
Takahashi R, Matsumoto Y and Koinuma H 2003 Recognition of the atomic terminating layer in perovskite oxide substrates by reflection high energy electron diffraction Japan. J. AppL Phys. 42 L389
-
(2003)
Japan. J. AppL Phys.
, vol.42
-
-
Takahashi, R.1
Matsumoto, Y.2
Koinuma, H.3
-
44
-
-
0034205888
-
RHEED intensity oscillations for the stoichiometric growth of SrTiO thin films by reactive molecular beam epitaxy
-
Haeni J H, Theis C D and Scholm D G 2000 RHEED intensity oscillations for the stoichiometric growth of SrTiO thin films by reactive molecular beam epitaxy J. Electroceram. 4 385
-
(2000)
J. Electroceram.
, vol.4
, pp. 385
-
-
Haeni, J.H.1
Theis, C.D.2
Scholm, D.G.3
-
46
-
-
0347354868
-
Study of GaAs layers grown on Ge substrates by MOVPE and in situ monitored by laser reflectometry
-
Rebey A, Habchi M M, Benzarti Z and El Jani B 2004 Study of GaAs layers grown on Ge substrates by MOVPE and in situ monitored by laser reflectometry Microelectron, J. 35 179
-
(2004)
Microelectron, J.
, vol.35
, pp. 179
-
-
Rebey, A.1
Habchi, M.M.2
Benzarti, Z.3
El Jani, B.4
-
47
-
-
0032620074
-
Precise control of 1.55 μm vertical-cavity surface-emitting laser structure with InAlGaAs/InAlAs Bragg reflectors by in situ growth monitoring
-
Baek J K, Choi I H, Lee B, Han W S and Cho H K 1999 Precise control of 1.55 μm vertical-cavity surface-emitting laser structure with InAlGaAs/InAlAs Bragg reflectors by in situ growth monitoring Appl. Phys. Lett. 75 1500
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 1500
-
-
Baek, J.K.1
Choi, I.H.2
Lee, B.3
Han, W.S.4
Cho, H.K.5
-
48
-
-
0034288205
-
Electron spectroscopy of solid surfaces
-
Zemek J 2000 Electron spectroscopy of solid surfaces Acta Phys. Slovaca 50 577
-
(2000)
Acta Phys. Slovaca
, vol.50
, pp. 577
-
-
Zemek, J.1
-
49
-
-
0038113157
-
2 on Si: IV. Intensity measurement in XPS and deduced thickness linearity
-
2 on Si: IV. Intensity measurement in XPS and deduced thickness linearity Surf. Interface Anal. 35 515
-
(2003)
Surf. Interface Anal.
, vol.35
, pp. 515
-
-
Seah, M.P.1
Spencer, S.J.2
-
51
-
-
10744229968
-
In-line monitoring of advanced microelectronics processes using combined x-ray techniques
-
Wyon C, Delille D, Gonchond J P, Heider F, Kwakman L, Marthon S, Mazor I, Michallet A, Muyard D, Perino-Gallice L, Royer J C and Tokar A 2004 In-line monitoring of advanced microelectronics processes using combined x-ray techniques Thin Solid Films 450 84
-
(2004)
Thin Solid Films
, vol.450
, pp. 84
-
-
Wyon, C.1
Delille, D.2
Gonchond, J.P.3
Heider, F.4
Kwakman, L.5
Marthon, S.6
Mazor, I.7
Michallet, A.8
Muyard, D.9
Perino-Gallice, L.10
Royer, J.C.11
Tokar, A.12
-
52
-
-
0242571566
-
Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition
-
Nesting D C, Kouvetakis J, Hearne S, Chason E and Tsong I S T 1999 Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition J. Vac. Sci, Technol. A 17 891
-
(1999)
J. Vac. Sci, Technol. A
, vol.17
, pp. 891
-
-
Nesting, D.C.1
Kouvetakis, J.2
Hearne, S.3
Chason, E.4
Tsong, I.S.T.5
-
54
-
-
24144458401
-
Semiconductor material applications of rapid x-ray reflectometry (XRR)
-
Johnson W C, Relja B, Koppel L and Gopinath S 2001 Semiconductor material applications of rapid x-ray reflectometry (XRR) AIP Conf. Proc. 550 461
-
(2001)
AIP Conf. Proc.
, vol.550
, pp. 461
-
-
Johnson, W.C.1
Relja, B.2
Koppel, L.3
Gopinath, S.4
-
56
-
-
0003761905
-
-
New York: Plenum
-
For older reviews of thickness sensors see: Eckertova L 1986 Physics of Thin Films (New York: Plenum) pp 75-94
-
(1986)
Physics of Thin Films
, pp. 75-94
-
-
Eckertova, L.1
-
57
-
-
24144473465
-
Film thickness measurement by monitoring methods
-
Greaves C 1970 Film thickness measurement by monitoring methods Vacuum 20 332
-
(1970)
Vacuum
, vol.20
, pp. 332
-
-
Greaves, C.1
-
58
-
-
24144446567
-
Recent developments in monitoring and controlling techniques for alloy deposition processes
-
Lu C 1977 Recent developments in monitoring and controlling techniques for alloy deposition processes Thin Solid Films 45 481
-
(1977)
Thin Solid Films
, vol.45
, pp. 481
-
-
Lu, C.1
|