Thickness and density measurement for new materials with combined X-ray technique

IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

Volumn 2, Issue , 2001, Pages 125-130

  Terada, Shinichi ^a   Murakami, Hiroyuki ^a   Nishihagi, Kazuo ^a  

^a Technos Co Ltd   (Japan)

Author keywords

Composition; Copper Low k; Crystal orientation; Density; PZT; Thickness; X ray; XRD; XRF; XRR

Indexed keywords

COMPOSITION; CRYSTAL ORIENTATION; DENSITY MEASUREMENT (SPECIFIC GRAVITY); FLUORESCENCE; REFLECTOMETERS; THICKNESS MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

X-RAY REFLECTOMETRY (XRR);

METALLIC FILMS;

EID: 0035180796     PISSN: 1523553X     EISSN: None     Source Type: Journal    
DOI: 10.1109/ASMC.2001.925630     Document Type: Article

References (6)

1. X-ray interference method - New metrology tool for film on wafers
2. Semiconductor material applications of rapid X-ray reflectometry
3. Structure and property characterization of low-k dielectric porous thin films determined by X-ray reflectivity and small-angle neutron scattering
4. Analyses of elastic modulus and hardness of low k dielectrics
5. Thickness and composition measurement for thin film with combined X-ray technique
6. Composition analysis of BST / SRO stacked films by GIXRF