In situ thickness measurements in molecular beam epitaxy using alpha particle energy loss

Surface and Coatings Technology

Volumn 94-95, Issue , 1997, Pages 374-378

  Beaudoin, M ^a   Gelbart, Z ^b   Giesen, U ^b,c   Kelson, I ^d   Levy, Y ^d   MacKenzie, J A ^a   Pinnington, T ^a   Ritchie, S ^a   SpringThorpe, A J ^e   Streater, R ^c,e   Tiedje, T ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^b TRIUMF   (Canada)

^c UNIVERSITY OF ALBERTA   (Canada)

^d TEL AVIV UNIVERSITY   (Israel)

^e NORTEL NETWORKS   (Canada)

Author keywords

MBE; Process control; Thickness measurement; Particles (AEL)

Indexed keywords

ALPHA PARTICLES; FILM GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES;

ALPHA PARTICLE ENERGY LOSS METHOD;

THICKNESS MEASUREMENT;

EID: 0031250483     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(97)00433-7     Document Type: Article

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