Analysis of quasi double gate method for performance prediction of deep submicron double gate SOI MOSFETs

Semiconductor Science and Technology

Volumn 20, Issue 5, 2005, Pages 423-429

  Kranti, Abhinav ^a   Chung, Tsung Ming ^a   Flandre, Denis ^a   Raskin, Jean Pierre ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

INVERSE KINEMATICS; MATHEMATICAL MODELS; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DOUBLE GATES (DG); INVERSION REGIONS; QUASI-DOUBLE GATES (QDG); SATURATION REGION;

MOSFET DEVICES;

EID: 24144456975     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/5/017     Document Type: Article

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