The behavior of two-dimensional electron gas in GaN/AlxGa 1-xN/GaN heterostructures with very thin AlxGa 1-xN barriers

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 19, Issue 4, 2003, Pages 321-327

  Kalafi, M ^a   Asgari, A ^a,b  

^a UNIVERSITY OF TABRIZ   (Iran)

^b UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

2DEG; AlGaN GaN; Subbands occupation

Indexed keywords

CARRIER CONCENTRATION; ELECTRON GAS; GALLIUM NITRIDE; POISSON EQUATION; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING;

CAPPING LAYERS;

HETEROJUNCTIONS;

EID: 0041360575     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(03)00377-1     Document Type: Article

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