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Volumn 283, Issue 1-2, 2005, Pages 31-40

Three-dimensional microstructural characterization of GaN nonplanar substrate laterally epitaxially overgrown by metalorganic chemical vapor deposition

(3) Zhou, Wei a Ren, Dawei b Dapkus, P D a

a University of Southern California (United States)

b UNIVERSITY OF SOUTHERN CALIFORNIA (United States)

Author keywords

A1. Dislocation reactions; A1. Dislocation reduction; A1. Threading dislocation; A1. Three dimensional; A1. Transmission electron microscopy; A2. Two step lateral epitaxial overgrowth

Indexed keywords

COALESCENCE; EPITAXIAL GROWTH; MICROSTRUCTURE; THREE DIMENSIONAL; TRANSMISSION ELECTRON MICROSCOPY; VECTORS;

DISLOCATION REACTIONS; DISLOCATION REDUCTION; THREADING DISLOCATION; TWO-STEP LATERAL EPITAXIAL OVERGROWTH;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 24144431568 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.05.046 Document Type: Article

Times cited : (3)

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