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Volumn 290, Issue 1, 2006, Pages 11-17

Transmission electron microscopy study of defect reduction in two-step lateral epitaxial overgrown nonplanar GaN substrate templates

(3) Zhou, Wei a Ren, Dawei b Dapkus, P D a

a University of Southern California (United States)

b UNIVERSITY OF SOUTHERN CALIFORNIA (United States)

Author keywords

A1. Dislocation reduction; A1. TEM; A1. Threading dislocation; A1. Transmission electron microscopy; A3. lateral epitaxial overgrowth; A3. LEO; A3. Metalorganic chemical vapor deposition; A3. MOCVD; B1. GaN; B1. Nitrides; B2. III V semiconductors; B3. Lasers

Indexed keywords

EPITAXIAL GROWTH; INTERFACES (MATERIALS); LASERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION REDUCTION; III-V SEMICONDUCTORS; LATERAL EPITAXIAL OVERGROWTH; THREADING DISLOCATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33645020600 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.12.108 Document Type: Article

Times cited : (9)

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