Behavior of threading dislocations in SAG-GaN grown by MOVPE

Physica Status Solidi (A) Applied Research

Volumn 180, Issue 1, 2000, Pages 171-175

  Horibuchi, K ^a   Kuwano, N ^a   Oki, K ^a   Kawaguchi, Y ^b   Sawaki, N ^b   Hiramatsu, K ^c  

^a KYUSHU UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c MIE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; DEPOSITION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GRAIN BOUNDARIES; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; TRANSMISSION ELECTRON MICROSCOPY;

CARRIER GAS; CRYSTALLOGRAPHIC ORIENTATION; EPITAXIAL LATERAL OVERGROWTH; MASK TERRACE; SELECTIVE AREA GROWTH GALLIUM NITRIDE; THREADING DISLOCATIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034224383     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200007)180:1<171::AID-PSSA171>3.0.CO;2-2     Document Type: Article

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