High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region

IEEE Photonics Technology Letters

Volumn 17, Issue 8, 2005, Pages 1719-1721

  Duan, Ning ^a   Wang, Shuling ^a   Ma, Feng ^a   Li, Ning ^a   Campbell, Joe C ^a   Wang, Chad ^b   Coldren, Larry A ^b  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Avalanche photodiodes (APDs); Impact ionization; Photodetectors

Indexed keywords

AVALANCHE DIODES; ELECTRIC FIELDS; IMPACT IONIZATION; PHOTODETECTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SPURIOUS SIGNAL NOISE;

AVALANCHE PHOTODIODES (APDS); ELECTRIC FIELD GRADIENT;

PHOTODIODES;

EID: 23844460174     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.851903     Document Type: Article

References (11)

1. F. Ma, N. Li, and J. C. Campbell, "Monte Carlo simulations of the bandwidth of InAlAs avalanche photodiodes," IEEE Trans. Electron Devices, vol. 50, no. 11, pp. 2291-2294, Nov. 2003.
2. P. Yuan, S. Wang, X. Sun, X. Zheng, A. L. Holmes Jr., and J. C. Campbell, "Avalanche photodiodes with an impact-ionization-engineered multiplication region," IEEE Photon. Technol. Lett., vol. 12, no. 10, pp. 1370-1372, Oct. 2000.
3. S. Wang, F. Ma, X. Li, R. Sidhu, X. G. Zheng, S. Sun, A. L. Holmes Jr., and J. C. Campbell, "Ultra-low noise avalanche photodiodes with a 'centered-well' multiplication region," IEEE J. Quantum Electron., vol. 39, no. 2, pp. 375-378, Feb. 2003.
4. F. Ma, S. Wang, X. Li, K. A. Anselm, X.-G. Zheng, A. L. Holmes Jr., and J. C. Campbell, "Monte Carlo simulation of low-noise avalanche photodiodes with heterojunctions," J. Appl. Phys., vol. 92, pp. 4791-4795, Oct. 2002.
5. S. Wang, J. B. Hurst, F. Ma, R. Sidhu, X. Sun, X. Zheng, A. L. Holmes Jr., and J. C. Campbell, "Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates," IEEE Photon. Technol. Lett., vol. 14, no. 12, pp. 1722-1724, Dec. 2002.
6. N. Duan, S. Wang, X. G. Zheng, X. Li, N. Li, J. C. Campbell, C. Wang, and L. A. Coldren, "Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs/InAlAs SACM avalanche photodiodes," IEEE J. Quantum Electron., vol. 41, no. 4, pp. 568-572, Apr. 2005.
7. X. G. Zheng, J. Hsu, X. Sun, J. B. Hurst, X. Li, S. Wang, A. L. Holmes Jr., J. C. Campbell, A. S. Huntington, and L. A. Coldren, "A 12 _ 12 In Ga As-In Al As avalanche photodiode array," IEEE J. Quantum Electron., vol. 38, no. 11, pp. 1536-1540, Nov. 2002.
8. S. Wang, R. Sidhu, X. G. Zheng, X. Li, X. Sun, A. L. Holmes Jr., and J. C. Campbell, "Low-noise avalanche photodiodes with graded impact-ionization-engineered multiplication region," IEEE Photon. Technol. Lett., vol. 13, no. 12, pp. 1346-1348, Dec. 2001.
9. O.-H. Kwon, M. M. Hayat, S. Wang, J. C. Campbell, A. Holmes Jr., Y. Pan, B. E. A. Saleh, and M. C. Teich, "Optimal excess noise reduction in thin heterojunction A10: 6Ga0: 4As-GaAs avalanche photodiodes," IEEE J. Quantum Electron., vol. 39, no. 10, pp. 1287-1296, Oct. 2003.
10. C. Groves, C. K. Chia, R. C. Tozer, J. P. R. David, and G. J. Rees, "Avalanche noise characteristics of single AlxGa1 xAs(0 : 3 < x < 0 : 6)-GaAs heterojunction APDs," IEEE J. Quantum Electron., vol. 41, no. 1, pp. 70-75, Jan. 2005.
11. S. A. Plimmer, C. H. Tan, J. P. R. David, R. Grey, K. F. Li, and G. J. Rees, "The effect of an electric-field gradient on avalanche noise," Appl. Phys. Lett., vol. 75, pp. 2963-2965, Nov. 1999.