High sensitivity Si-based backward diodes for zero-biased square-law detection and the effect of post-growth annealing on performance

IEEE Electron Device Letters

Volumn 26, Issue 8, 2005, Pages 575-578

  Jin, Niu ^a,b   Yu, Ronghua ^c   Chung, Sung Yong ^a   Berger, Paul R ^a   Thompson, Phillip E ^d   Fay, Patrick ^e  

^a The Ohio State University   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c OHIO STATE UNIVERSITY   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

^e University of Notre Dame   (United States)

Author keywords

Backward diodes; Millimeter wave detectors; Si SiGe heterojunction

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; TEMPERATURE;

BACKWARD DIODES; MILLIMETER WAVE DETECTORS; SILICON GERMANIUM HETEROJUNCTION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 23844456543     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.852738     Document Type: Article

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