Bias and Temperature Dependence of Sb-Based Heterostructure Millimeter-Wave Detectors with Improved Sensitivity

IEEE Electron Device Letters

Volumn 25, Issue 1, 2004, Pages 4-6

  Meyers, R G ^a   Fay, P ^a   Schulman, J N ^b   Thomas III, S ^b   Chow, D H ^b   Zinck, J ^b   Boegeman, Y K ^b   Deelman, P ^b  

^a University of Notre Dame   (United States)

^b Hughes Aircraft Co   (United States)

Author keywords

Backward diodes; Millimeter wave detectors; Millimeter wave diodes; Semiconductor heterojunctions; Tunnel diodes

Indexed keywords

ANTIMONY; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); HETEROJUNCTIONS; IMAGE ANALYSIS; LEAST SQUARES APPROXIMATIONS; LITHOGRAPHY; OSCILLATORS (ELECTRONIC); RADIOMETERS; SIGNAL DETECTION; SIGNAL TO NOISE RATIO; SILICON; THERMAL EFFECTS; TUNNEL DIODES;

JUNCTION RESISTANCE; MILLIMETER-WAVE DETECTORS; ON-WAFER SENSITIVITY; SEMICONDUCTOR HETEROJUNCTIONS; ZERO-BIAS OPERATION;

MILLIMETER WAVES;

EID: 0347337808     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.821601     Document Type: Article

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