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Volumn E83-C, Issue 8, 2000, Pages 1224-1227

RF analysis methodology for Si and SiGe FETs based on transient Monte Carlo simulation

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER DEVICES; COMPUTER SIMULATION; FINITE ELEMENT METHOD; GEOMETRY; MONTE CARLO METHODS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

EID: 0034251373     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (1)

References (9)
  • 3
    • 0028515347 scopus 로고
    • In-plane transport properties of Si/Sii_xGex structure and its FET performance by computer simulation
    • T. Yamada, J. Zhou, H. Miyata, and O.K. Ferry, "In-plane transport properties of Si/Sii_xGex structure and its FET performance by computer simulation," IEEE Trans. Electron Devices, vol.41, p.1513, 1994.
    • (1994) IEEE Trans. Electron Devices , vol.41 , pp. 1513
    • Yamada, T.1    Zhou, J.2    Miyata, H.3    Ferry, O.K.4
  • 4
    • 0003528782 scopus 로고
    • Monte Carlo Method for Semiconductor Device Simulation
    • C. Jacoboni and P. Lugli, Monte Carlo Method for Semiconductor Device Simulation, Springer-Verlag, Wien, 1989.
    • (1989) Springer-Verlag, Wien
    • Jacoboni, C.1    Lugli, P.2
  • 6
    • 0000113827 scopus 로고    scopus 로고
    • Monte Carlo study on the electron-transport properties of high-performancestraincd-Si on relaxed Sii_xGex channel MOSFETs
    • J.B. Roldân, F. Gamiz, J.A. Löpez-Villanueva, and J.E. Carceller, "Monte Carlo study on the electron-transport properties of high-performancestraincd-Si on relaxed Sii_xGex channel MOSFETs," J. Appl. Phys., vol.80, p.5121, 1996.
    • (1996) J. Appl. Phys. , vol.80 , pp. 5121
    • Roldân, J.B.1    Gamiz, F.2    Löpez-Villanueva, J.A.3    Carceller, J.E.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.