Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor

IEEE Electron Device Letters

Volumn 26, Issue 7, 2005, Pages 432-434

  Chu, Chun San ^a   Zhou, Yugang ^a   Chen, Kevin J ^a   Lau, Kei May ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AlGaN GaN; Capacitance voltage (C V); Equivalent circuit; Q factor; Schottky contacts; Varactor

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; EQUIVALENT CIRCUITS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; OHMIC CONTACTS; Q FACTOR MEASUREMENT; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; VARACTORS;

PLANAR INTERDIGITATED VARACTOR; SCHOTTKY CONTACTS;

MESFET DEVICES;

EID: 22944460194     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.851181     Document Type: Article

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