C-band linear resistive wide bandgap FET mixers

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2003, Pages 1303-1306

  Andersson, Kristoffer ^a   Desmaris, Vincent ^a   Eriksson, Joakim ^a   Rorsman, Niklas ^a   Zirath, Herbert ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS;

CONVERSION LOSS;

MIXER CIRCUITS;

EID: 0042063618     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. C. Fazi and P. G. Neudeck, "Wide dynamic range RF mixers using wide-bandgap semiconductors," Materials Science Forum, vol. 264-268, pp. 913-916, 1998.
2. J. Eriksson, N. Rorsman, F. Ferdos, and H. Zirath, "Design and characterisation of singly balanced silicon carbide Schottky diode highlevel mixer," Electronics Letters, vol. 37, pp. 54-55, 2001.
3. S. A. Maas, "A GaAs MESFET mixer with very low intermodulation," IEEE Transactions on Microwave Theory and Techniques, vol. MTT-35, pp. 425-429, 1987.
4. K. Andersson, J. Eriksson, N. Rorsman, and H. Zirath, "Resistive SiC-MESFET mixer," IEEE Microwave and Wireless Components Letters, vol. 12, pp. 119-121, 2002.
5. K. Andersson, J. Eriksson, N. Rorsman, and H. Zirath, "C-Band Resistive SiC-MESFET mixer," 10th Gallium Arsenide Application Symposium, pp. 41-43, September 2002, Milan.
6. K. Yhland, Resistive FET Mixers. Ph. D. Thesis, Göteborg: Chalmers University of Technology, 1999.