AlGaN/GaN varactor diode for integration in HEMT circuits

Electronics Letters

Volumn 37, Issue 24, 2001, Pages 1476-1478

  Marso, M ^a   Wolter, M ^a   Javorka, P ^a   Fox, A ^a   Kordos P ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRODES; ELECTRON GAS; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; VOLTAGE MEASUREMENT;

ALUMINUM GALLIUM NITRIDE; CAPACITANCE-VOLTAGE MEASUREMENT; HETEROSTRUCTURE VARACTOR DIODE; METAL-SEMICONDUCTOR-METAL DIODE;

VARACTORS;

EID: 0035935825     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20011007     Document Type: Article

References (6)

1. Selective InAlAs/InGaAs MBE growth for high frequency OEIC applications
2. 15 GHz monolithic MODFET-MSM integrated photoreceiver operating at 1.55 μm
3. Electrical behaviour of the InP/InGaAs based MSM-2DEG diode
4. Contact phenomena in a two-dimensional electron gas
5. Theory of junction between two-dimensional electron gas and p-type semiconductor
6. High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors