MSM diodes based on an AlGaN/GaN HEMT layer structure for varactor and photodiode application

ASDAM 2002 - Conference Proceedings, 4th International Conference on Advanced Semiconductor Devices and Microsystems

Volumn , Issue , 2002, Pages 295-298

  Marso, M ^a   Bernat J ^a   Wolter, A ^a   Javorka, P ^a   Fox, A ^a   Kordos P ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; ELECTRODES; GALLIUM NITRIDE; MICROSYSTEMS; PHOTODETECTORS; SEMICONDUCTOR DEVICES; VARACTORS;

CAPACITANCE RATIO; DEVICE FABRICATIONS; ELECTRODE GEOMETRIES; ELECTRODE LENGTHS; ETCHING TECHNIQUE; OPTIMIZED DEVICES; OPTOELECTRONIC MEASUREMENTS; OPTOELECTRONIC PROPERTIES;

SEMICONDUCTOR DIODES;

EID: 84964292305     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASDAM.2002.1088528     Document Type: Conference Paper

References (3)

1. M. Marso, M. Horstmann, H. Hardtdegen, P. Kordoš, and H. Lüth, Electrical behaviour of the InP/InGaAs based MSM-2DEG diode, Solid-State Electronics 41 (1997) 25-31
2. M. Marso, M. Wolter, P. Javorka, A. Fox, and P. Kordoš, AlGaN/GaN Varactor Diode for Integration in HEMT Circuits, Electronics Letters 37 (2001) 1478-1479
3. V. Duez, X. Mélique, O. Vanbésien, P. Mounaix, F. Mollot, and D. Lippens, High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors, Electronics Letters 34 (1998), 1860-1861