Physical Equivalent Circuit Model for Planar Schottky Varactor Diode

IEEE Transactions on Microwave Theory and Techniques

Volumn 36, Issue 2, 1988, Pages 250-255

  Philippe, Pascal ^a   El Kamali, Walid ^a   Pauker, Vlad ^a  

^a PHILIPS RESEARCH LABORATORIES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS - RESISTANCE; ELECTRIC NETWORKS - EQUIVALENT CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE - DOPING; SEMICONDUCTOR DIODES - OPTIMIZATION; VARACTORS;

ACTIVE LAYER; DISTRIBUTED RESISTANCE AND CAPACITANCE; PHYSICAL EQUIVALENT CIRCUIT MODEL; PLANAR SCHOTTKY VARACTOR DIODE;

SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER;

EID: 0023965444     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.3512     Document Type: Article

References (4)

1. G. E. Brehm, B. N. Scott, D. I. Seymour, W. R. Frensley, W. N. Duncan, and F. H. Doerbeck, “High capacitance ratio monolithc varactor diode,” in 1981 Cornell Microwaue Con&Dig., pp. 53-63.
2. B. N. Scott, G. E. Brehm, and F. H. Doerbeck, “X-band GaAs monolithic voltage controlled oscillators,” in ISSCC-82 Dig., 1982, pp. 138–139.
3. B. N. Scott and G. E. Brehm, “Monolithic voltage controlled oscillator for X and Ku-bands,” IEEE Trans. Microwave Theory Tech., vol. MTT-30, pp. 2172–2177, Dec. 1982.
4. W. El-Kamali, J. P. Grimm, R. Meierer, and C. Tsironis, “New design approach for wide-band FET voltage controlled oscillators,” IEEE Trans. Microwave Theory Tech., vol. MTT-34, pp. 1059–1063, Oct. 1986.