Electrical behaviour of the InP/InGaAs based MSM-2deg diode

Solid-State Electronics

Volumn 41, Issue 1, 1997, Pages 25-31

  Marso, M ^a   Horstmann, M ^a   Hardtdegen, H ^a   Kordos P ^a   Luth H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; ELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; NUMERICAL METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; VOLTAGE MEASUREMENT;

BARRIER ENHANCEMENT; CAPACITANCE VOLTAGE MEASUREMENT; ELECTRODE SPACING; TWO DIMENSIONAL ELECTRON GAS;

SEMICONDUCTOR DIODES;

EID: 0030778058     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00138-4     Document Type: Article

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