A novel RF high-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn , Issue , 2005, Pages 385-388

  Chu, Chun San ^a   Zhou, Yugang ^a   Chen, Kevin J ^a   Lau, Kei May ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AlGaN GaN; C V; Double channel; Equivalent circuit; Q factor; Schottky contacts; Varactor

Indexed keywords

ALGAN/GAN; Q-FACTOR; SCHOTTKY CONTACTS;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS;

VARACTORS;

EID: 27644536957     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2005.1489819     Document Type: Conference Paper

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