Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)

IEEE Microwave and Wireless Components Letters

Volumn 11, Issue 6, 2001, Pages 244-245

  Shealy, Jeffrey B ^a,b   Smart, Joseph A ^b   Shealy, James R ^b  

^a IEEE   (United States)

^b RF Nitro Communications Inc   (United States)

Author keywords

Gallium nitride; Oscillator; Solid state

Indexed keywords

DISTRIBUTED NETWORKS; PHASE NOISE; SEMICONDUCTING ALUMINUM GALLIUM NITRIDE;

CIRCUIT OSCILLATIONS; GALLIUM NITRIDE; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; RADIO COMMUNICATION; SCHEMATIC DIAGRAMS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE; TUNING; VARACTORS;

VARIABLE FREQUENCY OSCILLATORS;

EID: 0035381887     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/7260.928926     Document Type: Letter

References (10)

1. Remove ground terminal having an outdoor unit with a frequency-multiplier
2. A 2 watt Ku-band linear transmit module for VSAT applications
3. High Al-content AlGaN/GaN HEMTs on SiC with very high performance
4. The effect of surface passivation on the microwave characteristics of AlGaN/GaN HEMTs
5. GaAs FETs rival gunns in YIG-tuned oscillators
6. A high power microwave GaAs FET oscillator
7. Novel FET power oscillators
8. X-band reverse channel GaAs FET power VCO