High-power RF switching using III-Nitride metal-oxide-semiconductor heterojunction capacitors

IEEE Electron Device Letters

Volumn 26, Issue 2, 2005, Pages 56-58

  Simin, G ^a   Koudymov, A ^a   Yang, Z J ^a   Adivarahan, V ^a   Yang, J ^a   Khan, M Asif ^a  

^a University of South Carolina   (United States)

Author keywords

GaN; Heterostructure; High power; Metal oxide semiconductor heterojunction field effect transistor (MOSHFET); MOS capacitor; RF; Switch; Wireless

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRIC SWITCHES; ELECTRODES; ELECTRON GAS; EQUIVALENT CIRCUITS; HETEROJUNCTIONS; INSERTION LOSSES; INTERFACES (MATERIALS); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

CAPACITANCE VOLTAGE CHARACTERISTIC; HETEROJUNCTION CAPACITOR; HIGH POWER RF SWITCHING; MOSHFET; SELF ALIGNED FABRICATION;

MOS CAPACITORS;

EID: 13444252848     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.841470     Document Type: Article

References (10)

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