GdxSi grown with mass-analyzed low energy dual ion beam epitaxy technique

Journal of Crystal Growth

Volumn 242, Issue 3-4, 2002, Pages 389-394

  Zhou, Jian Ping ^a   Chen, Nuo Fu ^a   Zhang, Fu Qiang ^a   Song, Shu Lin ^a   Chai, Chun Lin ^a   Yang, Shao Yan ^a   Liu, Zhi Kai ^a   Lin, Lan Ying ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Auger electron spectroscopy; A1. X ray diffraction; A1. X ray photoelectron spectroscopy; A3. Ion beam epitaxy

Indexed keywords

AMORPHOUS MATERIALS; AUGER ELECTRON SPECTROSCOPY; BINDING ENERGY; GADOLINIUM COMPOUNDS; ION IMPLANTATION; SEMICONDUCTING FILMS; SILICON; SINGLE CRYSTALS; SUBSTRATES; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING GADOLINIUM SILICIDES;

CRYSTAL GROWTH;

EID: 0036645472     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01433-1     Document Type: Article

References (16)

1. Fe-N films prepared by dual ion beam sputtering