Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer

Applied Physics A: Materials Science and Processing

Volumn 81, Issue 4, 2005, Pages 813-816

  Ilahi, B ^a   Sfaxi, L ^a   Hassen, F ^a   Maaref, H ^a   Salem, B ^b   Guillot, G ^b   Jbeli, A ^c   Marie, X ^c  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHARGE CARRIERS; ELECTRIC EXCITATION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS;

ROOM TEMPERATURE; SOLID SOURCE MOLECULAR BEAM EPITAXY (SSMBE); STRAIN REDUCING LAYERS (SRL); TIME RESOLVED PHOTOLUMINESCENCE (TRPL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 22044454477     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-004-2871-z     Document Type: Article

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