High quality InAs quantum dots covered by InGaAs/GaAs hetero-capping layer

Physica Status Solidi C: Conferences

Volumn , Issue 3, 2003, Pages 939-943

  Ohtsubo, R ^a   Yamaguchi, K ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INAS QUANTUM DOTS; INHOMOGENEOUS BROADENING; PHOTOLUMINESCENCE INTENSITIES; RESIDUAL STRAINS; ROOM TEMPERATURE; SELF-ASSEMBLED; STRANSKI-KRASTANOV GROWTH MODE; SUBSTRATE TEMPERATURE;

GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 22044454024     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200306247     Document Type: Conference Paper

References (7)

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