Optical studies of GaInP/GaP quantum dots

Journal of Luminescence

Volumn 102-103, Issue SPEC, 2003, Pages 1-6

  Beirne, G J ^a,b   Jetter, M ^b   Rossi, M ^b   Porsche, J ^c   Scholz, F ^b   Schweizer, H ^b   Glynn, T J ^a  

^a NATIONAL UNIVERSITY OF IRELAND   (Ireland)

^b UNIVERSITY OF STUTTGART   (Germany)

^c OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

GaInP; GaP; Quantum dots; Time resolved photoluminescence

Indexed keywords

COMPOSITION; ELECTRIC EXCITATION; METALLORGANIC VAPOR PHASE EPITAXY; PHASE SEPARATION; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

TIME RESOLVED PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037402645     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(02)00546-X     Document Type: Conference Paper

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