Improved electroluminescence of InAs quantum dots with strain reducing layer

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 1044-1048

  Yeh, Nien Tze ^a   Nee, Tzer En ^a   Chyi, Jen Inn ^a   Chia, Chih Ta ^b   Hsu, Tzu Min ^a   Huang, Chien Chi ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

Author keywords

A3. Molecular beam epitaxy; A3. Quantum dots

Indexed keywords

ELECTROLUMINESCENCE; ELECTRON EMISSION; GROUND STATE; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS;

INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035399294     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00985-X     Document Type: Conference Paper

References (14)