Influence of InGaAs overgrowth layer on structural and optical properties of InAs quantum dots

Journal of Crystal Growth

Volumn 255, Issue 1-2, 2003, Pages 57-62

  Kim, Jin Soo ^a   Lee, Jin Hong ^a   Hong, Sung Ui ^a   Han, Won Seok ^a   Kwack, Ho Sang ^a   Oh, Dae Kon ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

A1. Energy level spacing; A1. Quantum dot aspect ratio; A3. Quantum dots

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; GROUND STATE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMAL EFFECTS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

PHOTOLUMINESCENCE (PL) SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0038378851     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01210-7     Document Type: Article

References (16)

1. Arakawa Y., Sakaki H. Appl. Phys. Lett. 40:1982;939.
2. Grundmann M., Stier O., Bimberg D. Phys. Rev. B. 52:1995;11969.
3. J.S. Kim, P.W. Yu, J.-Y. Leem, J.I. Lee, S.K. Noh, Jong S. Kim, G.H. Kim, S.-K. Kang, S.I. Ban, S.G. Kim, Y.D. Jang, U.H. Lee, J.S. Yim, D. Lee, J. Crystal Growth 234 (2002) 105.
4. J.S. Kim, P.W. Yu, J.-Y. Leem, J.I. Lee, S.K. Noh, Jong S. Kim, S.M. Kim, J.S. Son, U.H. Lee, J.S. Yim, D. Lee, Appl. Phys. Lett. 78 (2001) 3247.
5. Heinrichsdorff F., Mao M.H., Kirstaedter N., Krost A., Bimberg D., Kosogov A.O., Werner P. Appl. Phys. Lett. 71:1997;22.
6. Zhukov A.E., Kovsh A.R., Maleev N.A., Mikhrin S.S., Ustinov V.M., Tsatsul'nikov A.F., Maximov M.V., Volovik B.V., Bedarev D.A., Shernyakov Yu.M., Kop'ev P.S., Alferov Zh.I., Ledentsov N.N., Bimberg D. Appl. Phys. Lett. 75:1999;1926.
7. Mirin R.P., Ibbetson J.P., Nishi K., Gossard A.C., Bowers J.E. Appl. Phys. Lett. 67:1995;3795.
8. Liu H.Y., Wang X.D., Wu J., Xu B., Wei Y.Q., Jiang W.H., Ding D., Ye X.L., Lin F., Zhang J.F., Liang J.B., Wang Z.G. J. Appl. Phys. 88:2000;3392.
9. Ferdos F., Sadeghi M., Zhao Q.X., Wang S.M., Larsson A. J. Crystal Growth. 227-228:2001;1140.
10. Ledentsov N.N., Shchukin V.A., Grundmann M., Kirstaedter N., Bohrer J., Schmidt O., Bimberg D., Ustinov V.M., Egorov A.Yu., Zhukov A.E., Kop'ev P.S., Zaitsev S.V., Gordeev N.Yu., Alferov Zh.I., Borovkov A.I., Kosogov A.O., Ruvimov S.S., Werner P., Gösele U., Heydenreich J. Phys. Rev. B. 54:1996;8743.
11. Ledentsov N.N., Bohrer J., Bimberg D., Kochnev I.V., Maximov M.V., Kop'ev P.S., Alferov Zh.I., Kosogov A.O., Ruvimov S.S., Werner P., Gösele U. Appl. Phys. Lett. 69:1998;1095.
12. Xie Q., Madhukar A., Chen P., Kobayashi N.P. Phys. Rev. Lett. 75:1995;2542.
13. Lee J.I., Lee H.G., Shin E.J., Yu S., Kim D., Ihm G. Appl. Phys. Lett. 70:1997;2885.
14. Grundmann M., Ledenstov N.N., Stier O., Bimberg D., Ustinov V.M., Kop'ez P.S., Alferov Zh. Appl. Phys. Lett. 68:1996;979.
15. Kim J.S., Yu P.W., Lee J.I., Kim Jong S., Kim S.G., Leem J.Y., Jeon M. Appl. Phys. Lett. 80:2002;4714.
16. Y.D. Jang, U.H. Lee, H.S. Lee, D. Lee, J.S. Kim, J.-Y. Leem, S.K. Noh, Proceedings of the 11th International Symposium on the Physics of Semiconductors and Applications-2002, Cheju, Korea, 2002, p. 7.