Effects of growth interruption during the formation of InAs/GaAs self-assembled quantum dots grown by molecular beam epitaxy

Microelectronics Journal

Volumn 34, Issue 5-8, 2003, Pages 611-613

  Iizuka, K ^a   Mori, K ^a   Suzuki, T ^a  

^a NIPPON INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Molecular beam epitaxy; Photoluminescence; Quantum dots

Indexed keywords

LOW TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

SELF-ASSEMBLED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037905400     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00061-2     Document Type: Conference Paper

References (5)

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2. Yamaguchi K., Yujobo K., Kaizu T. Stranski-Krastanov growth of InAs quantum dots with narrow size distribution. Jpn. J. Appl. Phys. 39:2000;L1245-L1248.
3. Kaizu T., Yamaguchi K. Self-limiting process of InAs quantum dots grown by molecular beam epitaxy. Jpn. J. Appl. Phys. 40:2001;1885-1887.
4. Yoon S., Moon Y., Lee T.-W., Hwang H., Yoon E., Kim Y.D., Lee U.H., Lee D., Kim H.-S., Lee J.Y. Effects of growth interruption on the evolution of InAs/InP self-assembled quantum dots. J. Electron. Mater. 29:(5):2000;535-541.
5. Iizuka K., Matsumaru K., Suzuki T., Hirose H., Suzuki K., Okamoto H. Arsenic-free GaAs substrate preparation and direct growth of GaAs/AlGaAs multiple quantum well without buffer layer. J. Cryst. Growth. 150:1995;13-17.