Indium segregation and reevaporation effects on the photoluminescence properties of highly strained InxGa1-xAs/GaAs quantum wells

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 232-234

  Ilahi, B ^a   Sfaxi, L ^a   Bouzaiene L ^a   Hassen, F ^a   Maaref, H ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

Band gap variation; InxGa1 xAs; QW; Reevaporation

Indexed keywords

COMPUTATIONAL METHODS; EXCITONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SHRINKAGE; SUBSTRATES;

REEVAPORATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037393181     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00771-3     Document Type: Conference Paper

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