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Journal of Applied Physics
Volumn 69, Issue 4, 1991, Pages 2135-2142
Diffusion of boron in silicon during post-implantation annealing
(3)
Solmi, S
a
Baruffaldi, F
a
Canteri, R
b
a
CNR
(
Italy
)
b
ITC IRST
(
Italy
)
Author keywords
[No Author keywords available]
Indexed keywords
EID
:
21544453382
PISSN
:
00218979
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1063/1.348740
Document Type
:
Article
Times cited : (
165
)
References (
31
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