Reliability of multistacked tantalum-based structure as the barrier film in ultralarge-scale integrated metallization

Microelectronic Engineering

Volumn 81, Issue 1, 2005, Pages 44-52

  Ou, Keng Liang ^a   Wu, Chi Chang ^b   Hsu, Chiung Chi ^b   Chen, Chin Sung ^c   Shyng, Yih Chuen ^d   Wu, Wen Fa ^b  

^a TAIPEI MEDICAL UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c CATHAY GENERAL HOSPITAL   (Taiwan)

^d KAOHSIUNG ARMED FORCES GENERAL HOSPITAL   (Taiwan)

Author keywords

Diffusion barrier; Junction diode; Plasma treatment; Thermal stability

Indexed keywords

DIFFUSION; GRAIN SIZE AND SHAPE; LEAKAGE CURRENTS; METALLIZING; PLASMA THEORY; RELIABILITY; SEMICONDUCTOR DIODES; TANTALUM; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS LAYERS; DIFFUSION BARRIERS; JUNCTION DIODES; PLASMA TREATMENT;

LSI CIRCUITS;

EID: 21644446500     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.03.001     Document Type: Article

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