Reliability of multistacked chemical vapor deposited Ti/TiN structure as the diffusion barrier in ultralarge scale integrated metallization

Journal of the Electrochemical Society

Volumn 147, Issue 1, 2000, Pages 368-372

  Liu, Po Tsun ^a   Chang, Ting Chang ^b,c   Hu, J C ^d   Yang, Y L ^b   Sze, S M ^a,b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^d NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GRAIN BOUNDARIES; INTERDIFFUSION (SOLIDS); LEAKAGE CURRENTS; METALLIZING; MICROSCOPIC EXAMINATION; SECONDARY ION MASS SPECTROMETRY; THERMAL STRESS; TITANIUM NITRIDE; ULSI CIRCUITS;

DIFFUSION BARRIER LAYERS; MULTISTACKED FILMS; X-RAY TRANSMISSION MICROSCOPY;

SEMICONDUCTING FILMS;

EID: 0033896282     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393202     Document Type: Article

References (20)

1. R. I. Hegde, R. W. Fiordalice, E. O. Travis, and R. J. Tobin, J. Vac. Sci. Technol., B, 11, 1287 (1993).
2. J. S. Byun, C. R. Kim, K. G. Rha, and J. J. Kim, Jpn. J. Appl. Phys., 34, 978 (1995).
3. J. T. Hillman, R. Foster, J. Faguet, W. Triggs, R. Arora, and M. Ameen, Solid State Technol., 147 (July 1995).
4. A. Intemann, H. Koerner, G. Ruhl, K. Hieber, and E. Hartmann, in Advanced Metallization for ULSI Applications-X. R. Blumenthal and G. Jenssen, Editors, p. 209, Materials Research Society, Pittsburgh, PA (1995).
5. J. M. Fu, M. Narasimhan, G. D. Yao, X. Xu, and F. Chen, in Proceedings of the 12th International VLSI Multilevel Interconnection Conference, p. 198 (1995).
6. C. Faltermeier, C. Goldberg, M. Jones, A. Upham, D. Manger, G. Peterson, J. Lau, and A. E. Kaloyeros, J. Electrochem. Soc., 144, 1002 (1997).
7. J. Hu, M. Ameen, G. Leusink, D. Webb, and J. T. Hillman, Thin Solid Films, 308-309, 589 (1997).
8. J. Laimer, H. Stori, and P. Rodhammer, J. Vac. Sci. Technol., A-7, 2952 (1989).
9. N. J. Ianno, A. U. Ahmed, and D. E. Englebert, J. Electrochem. Soc., 136, 276 (1989).
10. A. Paranjpe and M. L. Raja, J. Vac. Sci. Technol., B, 13, 2105 (1995).
11. S. C. Sun and M. H. Tsai, Thin Solid Films, 253, 440 (1994).
12. J. T. Hillman, M. J. Rice, Jr., D. W. Studiner, R. F. Foster, and R. W. Fiordalice, in Proceedings of the 9th International VLSI Multilevel Interconnection Conference, p. 246 (1992).
13. T. Suzuki, T. Ohba, Y. Furumura, and H. Tsutikawa, in Proceedings of the 10th International VLSI Multilevel Interconnection Conference, p. 418 (1993).
14. Y. J. Mei, T. C. Chang, J. C. Hu, L. J. Chen, Y. L. Yang, F. M. Pan, W. F. Wu, A. Ting, and C.Y. Chang, Thin Solid Films, 308, 594 (1997).
15. D. Liao, Y. Iin, H. Yang, H. Witham, J. May, J. Iee, and S. Tso, in Proceedings of the 11th International VLSI Multilevel Interconnection Conference, p. 428 (1994).
16. G. Dixit, C. Wei, and F. Liou, Appl. Phys., Lett., 62, 357 (1993).
17. K. Ngan, R. Mosely, Z. Xu, and I. Raaijmakers, Mater. Res. Soc. Symp. Proc., 337, 249 (1994).
18. T. Taguwa, K. Urabe, K. Onto, H. Gomi, in Proceedings of the 14th International VLSI Multilevel Interconnection Conference, p. 255 (1997).
19. X. W. Lin, S. Bothra, L. Topete, D. Pramanik, in Proceedings of the 14th International VLSI Multilevel Interconnection Conference, p. 443 (1997).
20. R. W. Fiordalice, R. I. Hegde, and H, Kawasaki, J. Electrochem. Soc., 143, 2059 (1996).