Two-step, lightly nitrided gate oxidation for sub-0.5 μm CMOS technology

Materials Research Society Symposium - Proceedings

Volumn 428, Issue , 1996, Pages 409-414

  Roy, P K ^a   Ma, Y ^a   Flemming, M T ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELECTRON TUNNELING; GATES (TRANSISTOR); INTERFACES (MATERIALS); NITROGEN OXIDES; OXIDATION;

GATE OXIDES (GOX); LIGHT NITROGEN INCORPORATION; LIGHTLY NITRIDED GATE OXIDATION;

CMOS INTEGRATED CIRCUITS;

EID: 0030394108     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)