Characterization of stacked gate oxides by electron holography

Applied Physics Letters

Volumn 68, Issue 24, 1996, Pages 3410-3412

  Rau, W D ^a   Baumann, F H ^b   Rentschler, J A ^b   Roy, P K ^b   Ourmazd, A ^a  

^a IHP   (Germany)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21544439844     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115776     Document Type: Article

References (19)

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17. Thin Si samples mainly cleave on (111) and (110) planes.
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19. However, enhanced reproducibility of the chemical etching on a microscopic scale is still desirable.