SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 61-64

Use of carbon-free Ta2O5 thin-films as a gate insulator

(6) Devine, R A B a Chaneliere, C b Autran, J L b Balland, B b Paillet, P c Leray, J L c

a ORANGE LABS (France)

b UNIVERSITÉ DE LYON (France)

c CEA DIF (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRIC INSULATING MATERIALS; GATES (TRANSISTOR); INTERFACES (MATERIALS); MOS DEVICES; OXIDATION; OXIDES; TANTALUM COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; DIELECTRIC FILMS; ELECTRIC PROPERTIES; ELECTRON CYCLOTRON RESONANCE; MOSFET DEVICES; PHYSICAL PROPERTIES; SEMICONDUCTING FILMS;

CYCLOTRON RESONANCE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; GATE INSULATORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

DIELECTRIC FILMS; CMOS INTEGRATED CIRCUITS;

EID: 0031150211 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(97)00015-4 Document Type: Article

Times cited : (26)

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