Effects of internal electrical field on transient absorption in InxGa1−xN thin layers and quantum wells with different thickness by pump and probe spectroscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 8, 2003, Pages

  Omae, Kunimichi ^a   Kawakami, Yoichi ^a   Fujita, Shigeo ^a   Narukawa, Yukio ^b   Mukai, Takashi ^b  

^a KYOTO UNIVERSITY   (Japan)

^b NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; INDIUM; NITROGEN DERIVATIVE;

ARTICLE; DENSITY; DIODE; ELECTRIC FIELD; LASER DIODE; LIGHT EMITTING DIODE; LOW TEMPERATURE; LUMINESCENCE; PUMP AND PROBE SPECTROSCOPY; QUANTUM MECHANICS; ROOM TEMPERATURE; SEMICONDUCTOR; SPECTROSCOPY;

EID: 4644314834     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.085303     Document Type: Article

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