Temperature effects of constant bias stress on n-channel FETs with Hf-based gate dielectric

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2201-2204

  Choi, Rino ^a   Lee, Byoung Hun ^a,b   Young, Chadwin D ^a   Sim, Jang Hoan ^a   Bersuker, Gennadi ^a  

^a SEMATECH   (United States)

^b IBM   (United States)

Author keywords

Degradation; Hafnium silicate; Polysilicon gate; Temperature dependence; TiN gate

Indexed keywords

CRYSTALLIZATION; DIELECTRIC MATERIALS; DIFFUSION; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; POLYSILICON; SILICON; TRANSCONDUCTANCE; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM SILICATE; POLYSILICON GATES; TEMPERATURE DEPENDENCE; TIN GATES;

MOSFET DEVICES;

EID: 21244482537     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2201     Document Type: Conference Paper

References (18)

1. H. R. Huff, A. Hou, C. Lim, Y. Kim, J. Barnett, G. Bersuker, G. A. Brown, C. D. Young, P. M. Zeitzoff, J. Gutt, P. Lysaght, M. I. Gardner and R. W. Murto: Microelectron. Eng. 69 (2003) 152.
2. G. D. Wilk, R. M. Wallace and J. M. Anthony: J. Appl. Phys. 87 (2000) 484.
3. M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro and L. Colombo: Appl. Phys. Lett. 80 (2002) 3183.
4. A. L. P. Rotondaro, M. R. Visokay, J. J. Chambers, A. Shanware, R. Khamankar, H. Bu, R. T. Laaksonen, L. Tsung, M. Douglas, R. Kuan, M. J. Bevan, T. Grider, J. McPherson and L. Colombo: Tech. Dig. 2002 Symp. VLSI Technology (2002) p. 148.
5. A. L. P. Rotondaro, M. R. Visokay, A. Shanware, J. J. Chambers and L. Colombo: IEEE Electron Device Lett. 23 (2002) 603.
6. T. Aoyama, K. Suzuki, H. Tashiro, Y. Tada and K. Horiuchi: J. Electrochem. Soc. 145 (1998) 689.
7. K. Onishi, R. Choi, C. S. Kang, H.-J. Cho, Y. H. Kim, R. E. Nieh, J. Han, S. A. Krishnan, M. S. Akbar and J. C. Lee: IEEE Trans. Electron Devices 50 (2003) 1517.
8. K. Onishi, C. S. Kang, R. Choi, H.-J. Cho, S. Gopalan, R. Nieh, S. Krishnan and J. C. Lee: 2002 IEEE International Reliability Physics Symp. (2002) p. 419.
9. S. Zafar, A. Callegari, E. Gusev and M. V. Fischetti: J. Appl. Phys. 93 (2003) 9298.
10. A. Kreber, E. Cartier, L. Pantisano, M. Rosmeulen, R. Degraeve, T. Kauerauf, G. Groeseneken, H. E. Maes and U. Schwalke: 2003 IEEE Int. Reliability Physics Symp. (2003) p. 41.
11. S. J. Lee, H. F. Luan, C. H. Lee, T. S. Jeon, W. P. Bai, Y. Senzaki, D. Roberts and D. L. Kwong: Tech. Dig. 2001 Symp. VLSI Technology (2001) p. 133.
12. E. P. Gusev and C. P. D'Emic: Appl. Phys. Lett. 83 (2003) 5223.
13. C. D. Young, G. Bersuker, G. A. Brown, P. Lysaght, P. Zeitzoff, R. W. Murto and H. R. Huff: 2004 IEEE Int. Reliability Physics Symp. (2004) p. 597.
14. G. Bersuker, J. H. Sim, C. D. Young, R. Choi, B. H. Lee, P. Lysaght, G. A. Brown, P. M. Zeitzoff, M. Gardner, R. W. Murto and H. R. Huff: Mater. Res. Soc. Symp. 811 (2004) 31.
15. G. Bersuker, J. H. Sim, C. D. Young, R. Choi, P. M. Zeitzoff, G. A. Brown, B. H. Lee and R. W. Murto: Microelectron. Reliab. 44 (2004) 1509.
16. R. Choi, B. H. Lee, K. Matthews, J. H. Sim, G. Bersuker, L. Larson and J. C. Lee: Tech. Dig. 2004 Device Research Conf. (2004) p. 17.
17. G. Bersuker et al.: 2004 IEEE Int. Reliability Physics Symp. (2004) p. 479.
18. D. C. Guo, L. Y. Song, X. W. Wang, T. P. Ma, B. H. Lee, S. Gopalan and R. Choi: 2004 Electronic Materials Conf. (2004).