A donorlike deep level defect in Al0.12Ga0.88N characterized by capacitance transient spectroscopies

Applied Physics Letters

Volumn 69, Issue 16, 1996, Pages 2379-2381

  Gotz W ^a   Johnson, N M ^a   Bremser, M D ^b   Davis, R F ^b  

^a PALO ALTO RESEARCH CENTER   (United States)

^b North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346449481     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117643     Document Type: Article

References (10)

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