Deep levels studies of AlGaN/GaN superlattices

Solid-State Electronics

Volumn 47, Issue 4, 2003, Pages 671-676

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Mil'vidskii, M G ^a   Pearton, S J ^b   Usikov, A S ^c   Shmidt, N M ^c   Osinsky, A V ^d   Lundin, W V ^c   Zavarin, E E ^c   Besulkin, A I ^c  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c IOFFE INSTITUTE   (Russian Federation)

^d Corning Applied Technologies ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PIEZOELECTRICITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING;

MICROCATHODOLUMINESCENCE;

SEMICONDUCTOR SUPERLATTICES;

EID: 0037392601     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00319-2     Document Type: Article

References (16)

1. Grandjean N., Massies J. Appl. Phys. Lett. 73:1998;1260.
2. Dalfors J., Bergman J.P., Holz P.O., Monemar B., Amano H., Akasaki I. MRS Internet J. Nitrides Res. (MIJ-NSR). 4:1998;article 7.
3. Im J.S., Kollmer H., Gefrore O., Off J., Scholz F., Hangleiter A. MRS Internet J. Nitride Semicond. Res. 4S1:1999;G6.20.
4. Polyakov A.Y., Smirnov N.B., Govorkov A.V., Shlensky A.A., Mil'vidskii M.G., Pearton S.J.et al. J. Electron. Materials. 31:2002;384.
5. Polyakov A.Y., Smirnov N.B., Govorkov A.V., Osinsky A.V., Norris P.E., Pearton S.J.et al. Appl. Phys. Lett. 79:2001;4372.
6. Uenoyama T., Suzuki M. Electronic and optical properties of bulk and QW structures. Pearton S.J. GaN and related materials II. 1999;263-303 Gordon and Breach Science Publishers, The Netherlands.
7. Lundin W.V., Usikov A.S., Pushnyi B.V., Ushakov U.I., Stepanov M., Shmidt N.M.et al. Proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials. 1997;395-401 Institute of Physics, Stockholm.
8. Polyakov A.Y., Smirnov N.B., Govorkov A.V., Mil'vidskii M.G., Usikov A.S., Pushnyi B.V.et al. Solid-State Electronics. 43:1999;1929.
9. Polyakov A.Y., Smirnov N.B., Govorkov A.V., Greve D.W., Skowronski M., Shin M.et al. MRS Internet J. Nitride Semicond. Res. (MIJ-NSR). 3:1998;article 37.
10. Polyakov A.Y., Smirnov N.B., Govorkov A.V., Shin M., Skowronski M., Greve D.W. J. Appl. Phys. 84:1998;870.
11. Polyakov A.Y., Smirnov N.B., Usikov A.S., Govorkov A.V., Pushniy B.V. Solid-State Electronics. 42:1998;1959.
12. Polyakov A.Y. Structural and electronic properties of AlGaN. Pearton S.J. GaN and related materials II. 1999;173-233 Gordon and Breach Science Publishers, The Netherlands.
13. Lang D.V., Panish M.B., Capasso F., Allam J., Hamm R.A., Sergent A.M.et al. Appl. Phys. Lett. 50:1987;736.
14. Lang D.V., Sergent A.M., Panish M.B., Temkin H. Appl. Phys. Lett. 49:1986;812.
15. Polyakov A.Y., Smirnov N.B., Govorkov A.V., Osinsky A.V., Norris P.E., Pearton S.J.et al. J. Appl. Phys. 90:2001;4032.
16. Milnes A.G. Deep impurities in semiconductors. 1973;Wiley & Sons, New York. (Chapter 5).