Carrier capture and escape times in In0.35Ga0.65As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements

IEEE Photonics Technology Letters

Volumn 8, Issue 10, 1996, Pages 1294-1296

  Esquivias, I ^a,d   Weisser, S ^b   Romero, B ^a   Ralston, J D ^b,c,d   Rosenzweig, J ^b  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c SDL INC   (United States)

^d IEEE

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CHARGE CARRIERS; ELECTRIC IMPEDANCE; ELECTRIC IMPEDANCE MEASUREMENT; ELECTRIC NETWORK ANALYZERS; LIGHT MODULATION; MATHEMATICAL MODELS; PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

CAPTURE EFFECTS; CARRIER CAPTURE; CARRIER LIFETIME; CARRIER TRANSPORT; ESCAPE TIMES; HIGH FREQUENCY ELECTRICAL IMPEDANCE; MODULATION RESPONSE; MULTIQUANTUM WELL LASERS; THREE RATE EQUATION MODEL;

QUANTUM WELL LASERS;

EID: 0030270277     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.536632     Document Type: Article

References (12)

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