Analysis of junctions formed in strained Si/SiGe substrates

Materials Research Society Symposium Proceedings

Volumn 809, Issue , 2004, Pages 187-192

  Eneman, G ^a,b,d   Simoen, E ^a   Lauwers, A ^a   Lindsay, R ^a   Verheyen, P ^a   Delhougne, R ^a,b   Loo, R ^a   Caymax, M ^a   Meunier Beillard, P ^c   Demuynck, S ^a,b   De Meyer, K ^a,b   Vandervorst, W ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d FUND FOR SCIENTIFIC RESEARCH   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DISLOCATIONS (CRYSTALS); MOSFET DEVICES; SILICON COMPOUNDS; SILICON WAFERS; THERMAL CONDUCTIVITY; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION FORMATION; HIGHLY DOPED DRAIN (HDD); JUNCTION LEAKAGE; SPACE CHARGE REGION (SCR);

SEMICONDUCTOR JUNCTIONS;

EID: 19944433731     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-809-b6.4     Document Type: Conference Paper

References (9)

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4. J.-S. Goo et al., IEEE Electr. Dev. Lett. 24, p. 351 (2003)
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6. R. Delhougne et al., Proc. of the ISTDM 2003, Applied Surface Science 224, p. 91 (2004)
7. R. Delhougne et al, accepted for publication in Solid State Electronics-Special Issue Strained-Si Heterostructures and Devices
8. R. Loo et al., to be presented at MRS 2004 Spring Meeting
9. J. Weber, M.I. Alonso, Phys. Rev. B 40, p. 5683, (1989)