Spectroscopic identification of light emitted from defects in silicon devices

Journal of Applied Physics

Volumn 89, Issue 1, 2001, Pages 249-258

  Rasras, Mahmoud S ^a,b   De Wolf, Ingrid ^a   Groeseneken, Guido ^a   Maes, Herman E ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0242665001     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1322595     Document Type: Article

References (26)

1. J. Kölzer, C. Boit, A. Dallmann, G Deboy, J. Otto, and D. Weinmann, J. Appl. Phys. 71, R23 (1992).
2. Y. Y. Liu, J. M. Tao, D. S. H. Chang, J. C. H. Phang, and W. K. Chim, in Proc. IPFA'95, 1995, p. 60.
3. R. Fritzemeier, J. Soden, R. Treece, and F. Hawkins, in Proc. Int. Tes. Con., 1990, p. 472.
4. J. M. Tao, W. K. Chim, D. S. H. Chang, J. C. H. Phang, and Y. Y. Liu, in Proc. IRPS, 1996, p. 360.
5. K. de Kort and P. Damink, ESREF'90, 1990, p. 45.
6. J. Bude, N. Sano, and A. Yoshii, Phys. Rev. B 45, 5848 (1992).
7. K. de Kort, P. Damink, and H. Boots, Phys. Rev. B 48, 11912 (1993).
8. T. Figielski and Torun, Int. Con. on Phys. in Semic., 1962, p. 863.
9. A. Toriumi, M. Yoshimi, M. Iwase, Y. Akiiama, and K. Taniguchi, IEEE Trans. Electron Devices ED-34, 1508 (1987).
10. A. G. Chynoweth and K. G. McKay, Phys. Rev. 102, 369 (1956).
11. S. Villa, A. Lacaita, and A. Pacelli, Phys. Rev. B 52, 10993 (1995).
12. M. Lanzoni, E. Sangiorgi, C. Fiegna, M. Manfredi, and B. Ricco, IEEE Electron Device Lett. 112, 341 (1991).
13. A. Witvrouw, S. Van Dooren, D. Wouters, M. Van Dievel, and K. Maex, Micro-Engen. Rel. 36, 1847 (1996).
14. I. De Wolf, D. J. Howard, M. Rasras, A. Lauwers, K. Maex, G. Groeseneken, and H. E. Maes, in Proc. IRPS, 1998, p. 124.
15. N. Khurana, T. Maloney, and W. Yeh, in Proc. IRPS, 1985, p. 212.
16. A. Amerasekera, L. van Roozendaal, J. Abderhalden, J. Bruines, and L. Sevat, in Proc. EOS/ESD, 1990, p. 143.
17. Hannemann, A. Amerasekera, in Proc. ESREF, 1990, p. 77.
18. Duvvury, and A. Amerasekera, in Proc. EOS/ESD, 1995, p. 162.
19. P. Salome, C. Leroux, J. P. Chante, P. Crevel, and G. Reimbold, in Proc. ESD/EOS, 1997, p. 325.
20. C. Russ, K. Bock, M. Rasras, I. De Wolf, G. Groeseneken, and H. E. Maes, in Proc. EOS/ESD, 1998, p. 177.
21. K. Bock, C. Russ, G. Badenes, G. Groeseneken, and L. Deferm. in Ref. 30, p. 308.
22. E. Cartier, Microelectron. Eng. 36, 103 (1997).
23. A. J. Pepe, W. Chen, and M. Oyler, J. Electrochem. Soc. 140, (1993).
24. M. Rasras, I. De Wold, G. Groeseneken, B. Kaczer, R. Degraeve, and H. E. Maes. Tech. Dig. Int. Electron Devices Meet. 465 (1999).
25. N. Khurana, and C. L. Chiang, Tech. Dig. Int. Electron Devices Meet. 672 (1986).
26. R. Degraeve, J. L. Ogier, R. Bellens, P. J. Roussel, G. Groeseneken, and H. E. Maes, IEEE Trans. Electron Devices ED-45 (1998).