Effects of thin GaAs insertion layer on InAs (InGaAs) InP (001) quantum dots grown by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 86, Issue 22, 2005, Pages 1-3

  Park, Kwangmin ^a   Moon, Pilkyung ^a   Ahn, Eungjin ^a   Hong, Sukwon ^a   Yoon, Euijoon ^a   Yoon, Jeong Won ^b   Cheong, Hyeonsik ^b   Leburton, Jean Pierre ^c  

^a Seoul National University   (South Korea)

^b Sogang University   (South Korea)

^c United States of America   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FULL WIDTH AT HALF MAXIMUM (FWHM); ISLAND CHAINS; MODEL SYSTEMS; PLANAR LAYERS;

ABSORPTION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED RADIATION; LIQUID PHASE EPITAXY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 20844436728     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1943494     Document Type: Article

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