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Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 15, 2001, Pages

Enhanced intraband transitions with strong electric-field asymmetry in stacked InAs/GaAs self-assembled quantum dots

(2) Sheng, Weidong a Leburton, Jean Pierre a

a United States of America (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM; INDIUM;

ARTICLE; CONDUCTANCE; ELECTRIC FIELD; ELECTRONICS; ENERGY; LIGHT; MATHEMATICAL ANALYSIS; OSCILLATION; QUANTUM MECHANICS;

EID: 0035887479 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.64.153302 Document Type: Article

Times cited : (26)

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