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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1 B, 1999, Pages 601-604

Multi-Stacked InAs/InGaAs/InP Quantum Dot Laser (Jth = 11A/cm2, λ = 1.9 μm (77 K))

(8) Zaitsev, Sergey V a,b Gordeev, Nikita Yu a Kopchatov, Vladimir I a Ustinov, Victor M a Zhukov, Alexey E a Egorov, Anton Yu a Kovsh, Alexey R a KoP'Ev, Peter S a

a IOFFE INSTITUTE (Russian Federation)

b The University of Texas at Austin (United States)

Author keywords

Injection laser; Quantum dot; Quantum efficiency

Indexed keywords

CRYSTAL LATTICES; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

SELF-ORGANIZED QUANTUM DOTS;

INJECTION LASERS;

EID: 0032608157 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.38.601 Document Type: Article

Times cited : (20)

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