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Journal of Crystal Growth

Volumn 281, Issue 1, 2005, Pages 194-201

Influence of dislocation and ionized impurity scattering on the electron mobility in GaN/AlGaN heterostructures

(7) Knap, W a,c Skierbiszewski, C a,b Dybko, K d Lusakowski J c,e Siekacz, M a Grzegory, I a Porowski, S a

a INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

b TOPGAN LTD (Poland)

c UNIVERSITÉ MONTPELLIER 2 (France)

d INSTITUTE OF PHYSICS (Poland)

e UNIVERSITY OF WARSAW (Poland)

Author keywords

A3. Molecular Beam epitaxy; A3. Quantum wells; B1. Nitrides

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON MOBILITY; GALLIUM NITRIDE; IMPURITIES; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NITRIDES; OPTOELECTRONIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

BULK CRYSTALS; DISLOCATION DENSITIES; IMPURITY COMPENSATION; IMPURITY CONCENTRATIONS;

HETEROJUNCTIONS;

EID: 20744431798 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.03.025 Document Type: Conference Paper

Times cited : (10)

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